IGBT - IXGT40N60C2D1 HIGHPERFAST IGBTs + DIODE 600V 40A 32NS

Brand: GERMANY

Group: Semiconductor

Subgroup: IGBT

Model / Brand: IXYS

Stock: Please Call.

قیمت: 250,000 Tomman

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Keywords: IXGT40N60C2D1

 

 

Detail:

Maximum power dissipation (Pc) of IGBT transistor, W: Maximum collector-emitter voltage |Uce|, V: 600V Collector-emitter saturation voltage |Ucesat|, V: 2.7V Maximum gate-emitter voltage |Ueg|, V: Maximum collector current |Ic|, A: 75A Maximum junction temperature (Tj), °C: Rise time, nS: 32 Maximum collector capacity (Cc), pF: Package: TO268